Skip to main content Accessibility help

Pulsed Excimer Laser Deposition and Rapid Thermal Annealing of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films on Si-on-Insulator

  • Yiqing Chen (a1), Lirong Zheng (a1), Chenglu Lin (a1), Xinglong Xu (a2) and Shichang Zou (a1)...


Stoichiometric films of Pb(Zr0.52Ti0.48)O3 (PZT) were successfully deposited on Si-on-Insulator (SOI) substrates, with and without a platinum electrode, by an ArF (λ=193nm) pulsed excimer laser. Rapid thermal annealing (RTA) was used to transform amorphous or pyrochlore phase into ferroelectric perovskite phase. The film structure, composition, morphology, interface and electrical properties were studied by x-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (XTEM) and Sawyer-Tower circuit, respectively. It was found that there was a narrow operational window of annealing time for PZT films at fixed annealing temperature. Pure ferroelectric perovskite phase with mainly (100) and (110) orientations could be obtained in PZT films on Pt coated SOI substrates. The interfaces between the PZT films and both Si and Pt//Si were very abrupt, indicating there was no interdiffusion between them. Ferroelectric hysteresis loops showed a remanent polarization of 15μC/cm2 and a coercive field of 50KV/cm.



Hide All
[1] Vasant Kumar, C.V.R., Sayer, M., et al., Appl. Phys. Lett., 58, 1161 (1991)
[2] Yamazaki, H., Tsuyama, T., et al., Jpn. J. Appl. Phys. 31B, 2995, (1992)
[3] Kang, J., Yoko, T., et al., Jpn. J. Appl. Phys., 30B, 2182 (1991)
[4] Dijkkamp, D., Venkatesan, T., et al., Appl. Phys. Lett., 51, 619 (1987)
[5] Wu, X.D., Dijkkamp, D., et al., Appl. Phys. Lett., 51, 861 (1987)
[6] Soy, D. and Krupanidhi, S.B., Appl. Phys. Lett., 61, 2057 (1992)
[7] Tam, A.C., Leng, W.P., et al., J. Appl. Phys., 69, 2072 (1991)
[8] Doll, G.L., Shell, J.A., et al., Phys. Rev. B, 43, 6816 (1991)
[9] Hosack, H.H., in Proc, the Fifth International Symposium on Silicon-on-Insulation Technology and Devices, “Electronics and Dielectrics and Insulation Divisions”, 92–13,(1992)
[10] Lin, C., Yu, Y., et al., Science in China, A33, 95 (1991)
[11] Cullity, B.D., Elements of X-ray Diffraction, 2nd ed. p. 102 (Addison-Wesley, New York, 1987)
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed