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Pulsed-CO2-Laser Annealing of Ion-ImplantedSilicon

Published online by Cambridge University Press:  25 February 2011

R.B. James ,
J. Narayan ,
W.H. Christie ,
R.E. Eby ,
O.W. Holland  and
R.F. Wood
R.B. James
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tn 37831
J. Narayan
Affiliation:
Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
W.H. Christie
Affiliation:
Analytical Chemistry Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
R.E. Eby
Affiliation:
Analytical Chemistry Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
O.W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tn 37831 Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
R.F. Wood
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tn 37831
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Abstract

From studies of time-resolved reflectivity and microstructural changes, wehave obtained direct evidence of CO2 laser-induced melting abovea threshold energy density. Results of the optical measurements,transmission electron microscopy, and secondary ion mass spectrometry arereported. The measurements show that melt depths as deep as 1 μm can beachieved with pulsed CO2 laser radiation. By using differentialabsorption between layers with different free-carrier densities, we findthat a CO2 laser can be used to melt regions which are embeddedin the material. It is likely that this observed phenomenon is impossible toobtain with a visible or ultraviolet laser.

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References

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