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Pulse-Duration-Dependent-Free-Carrier-Absorption in Semiconductors

  • P. Mukherjee (a1), M. Sheik-Bahaei (a1) and H.S. Kwok (a1)

The free carrier absorption in InSb was found to depend on the pulse duration of the picosecond CO2 laser pulse. This is interpreted as the effect of incomplete carrier relaxation within the laser pulse duration. An electron energy relaxation time of 5.6 ps was derived from the observation. The present experiment presents a new method of measuring relaxation times in semiconductors and metals.

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[1] Yu, Z.Y. and Tang, C.L., Appl. Phys. Lett. 44, 1235(1984).
[2] Wiener, A., presented at Third Topical Meeting on Ultrafast Phenomena, Monterey, CA 1984.
[3] Kwok, H.S. and Yablonovitch, E., Appl. Phys. Lett. 30, 158(1977)
[4] Sheik, M., Kwok, H.S., to be published.
[5] Hasselbeck, M. and Kwok, H.S., Appl. Phys. Lett. 41, 1204(1982)
[6] Kobayashi, T., J. Appl. Phys. 48, 3154(1977).
[7] Corkum, P., Opt. Lett. 8, 514(1983).
[8] Jensen, B., IEEE J. Ouant. Elect. QE–18, 136(1982).
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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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