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Pyroelectric Effect in Wurtzite Gallium Nitride

Published online by Cambridge University Press:  15 February 2011

A. D. Bykhovski ,
V. V. Kaminski ,
M. S. Shur ,
Q. C. Chen  and
M. A. Khan
A. D. Bykhovski
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22903-2442, USA, ab4k@virginia.edu A. F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia
V. V. Kaminski
Affiliation:
A. F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia
M. S. Shur
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22903-2442, USA, ab4k@virginia.edu
Q. C. Chen
Affiliation:
APA Optics, Inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
M. A. Khan
Affiliation:
APA Optics, Inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
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Abstract

We report on the measurements of the pyroeffect in wurtzite n-type GaN films deposited over basal plane sapphire substrates. The voltage drop between the contacts was measured while the sample was subjected to uniform heating. Our results show that the pyroelectric effect in GaN can be partially attributed to the secondary pyroelectricity, caused by the development of strain in the material due to thermal expansion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 75
Copyright
Copyright © Materials Research Society 1996

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References

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