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Quantum-Sized Silicon Precipitates in Silicon-Implanted and Pulse-Annealed Silicon Dioxide Films: Photoluminescence and Structural Transformations

Published online by Cambridge University Press:  03 September 2012

I. E. Tyschenko ,
G. A. Kachurin ,
K. S. Zhuravlev ,
N. A. Pazdnikov ,
V. A. Volodin ,
A. K. Gutakovsky ,
A. F. Leier ,
H. Fröb ,
K. Leo  and
T. Böime
...Show all authors
I. E. Tyschenko
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibisk, Russia
G. A. Kachurin
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibisk, Russia
K. S. Zhuravlev
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibisk, Russia
N. A. Pazdnikov
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibisk, Russia
V. A. Volodin
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibisk, Russia
A. K. Gutakovsky
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibisk, Russia
A. F. Leier
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibisk, Russia
H. Fröb
Affiliation:
Insitute of Applied Photophysics, Technical University of Dresden, 13 Mommsenstrasse, D-01062 Dresden, Germany
K. Leo
Affiliation:
Insitute of Applied Photophysics, Technical University of Dresden, 13 Mommsenstrasse, D-01062 Dresden, Germany
T. Böime
Affiliation:
Insitute of Applied Photophysics, Technical University of Dresden, 13 Mommsenstrasse, D-01062 Dresden, Germany
L. Rebohle
Affiliation:
Institute of Ion Beam Physics and Materials Research, Research Centre Rossendorf, Inc.POB 510119, D-01314 Dresden, Germany
R. A. Yankov
Affiliation:
Institute of Ion Beam Physics and Materials Research, Research Centre Rossendorf, Inc.POB 510119, D-01314 Dresden, Germany
W. Skorupa
Affiliation:
Institute of Ion Beam Physics and Materials Research, Research Centre Rossendorf, Inc.POB 510119, D-01314 Dresden, Germany
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Abstract

Strong blue, red and near-infrared photoluminescence has been observed from Si+-implanted and pulse-annealed SiO2 layers. Raman scattering and high-resolution electron microscopy analyses have revealed a correlation between the structure of the Si inclusions in the SiO2 matrix and the photoluminescence. Structural transformations in the Si-rich SiO2 layers during pulse and furnace annealing have been discussed in terms of the changes in the light emission observed experimentally. Small Si clusters, non-crystalline inclusions and nanocrystals are believed to be the light sources. The blue, red and near-infrared photoluminescence is associated with small complexes of excess Si atoms, non-crystalline Si nanoinclusions and quantum-confined Si nanocrystals, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 453
Copyright
Copyright © Materials Research Society 1997

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