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Raman Spectroscopy Study of Pulsed Laser Induced Structural Transformations in Amorphous Ge Films

Published online by Cambridge University Press:  15 February 2011

C. García
Affiliation:
Física de la Materia Condensada, Cristalografía y Mineralogía, Universidad de Valladolid, 47011 Valladolid, Spain Departement de Physique, Faculté des Sciences, Meknes, Morocco
A.C. Prieto
Affiliation:
Física de la Materia Condensada, Cristalografía y Mineralogía, Universidad de Valladolid, 47011 Valladolid, Spain Departement de Physique, Faculté des Sciences, Meknes, Morocco
J. Jiménez
Affiliation:
Física de la Materia Condensada, Cristalografía y Mineralogía, Universidad de Valladolid, 47011 Valladolid, Spain Departement de Physique, Faculté des Sciences, Meknes, Morocco
J. Siegel
Affiliation:
Instituto de Óptica, CSIC, Serrano 121, 28006 Madrid, Spain Departement de Physique, Faculté des Sciences, Meknes, Morocco
J. Solís
Affiliation:
Instituto de Óptica, CSIC, Serrano 121, 28006 Madrid, Spain Departement de Physique, Faculté des Sciences, Meknes, Morocco
C.N. Afonso
Affiliation:
Instituto de Óptica, CSIC, Serrano 121, 28006 Madrid, Spain Departement de Physique, Faculté des Sciences, Meknes, Morocco
M. Chafai
Affiliation:
Instituto de Óptica, CSIC, Serrano 121, 28006 Madrid, Spain Departement de Physique, Faculté des Sciences, Meknes, Morocco
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Abstract

Structural transformations induced in amorphous Ge films by picosecond laser pulses are studied by means of Raman spectroscopy and their dependence on parameters like the pulse fluence or the thermal conductivity of the substrate are analyzed. A correlation length model is used for studying the crystallization process, while the average bond angle distortion is used for determining the state of relaxation of the amorphous phase. Silicon and glass substrates are compared.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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