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Rapid Thermal Process Requirements for The Annealing of Ultra-Shallow Junctions

Published online by Cambridge University Press:  10 February 2011

Daniel F. Downey ,
Sonu L. Daryanani ,
Marylou Meloni ,
Kristen M. Brown ,
Susan B. Felch ,
Brian S. Lee ,
Steven D. Marcus  and
Jeff Gelpey
Daniel F. Downey
Affiliation:
Varian Ion Implant Systems, Gloucester, MA
Sonu L. Daryanani
Affiliation:
Varian Ion Implant Systems, Gloucester, MA
Marylou Meloni
Affiliation:
Varian Ion Implant Systems, Gloucester, MA
Kristen M. Brown
Affiliation:
Varian Ion Implant Systems, Gloucester, MA
Susan B. Felch
Affiliation:
Varian Ginzton Research Center, Palo Alto, CA
Brian S. Lee
Affiliation:
Varian Ginzton Research Center, Palo Alto, CA
Steven D. Marcus
Affiliation:
AST elektronik USA, Tempe, AZ.
Jeff Gelpey
Affiliation:
AST elektronik USA, Tempe, AZ.
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Abstract

2. 0 keV 11B+, 2.2 keV 49BF2+ ion implanted and 1.0 kV Plasma Doped (PLAD) wafers of a dose of 1E15/cm2 were annealed at various times and temperatures in a variety of ambiente: 600 to 50,000 ppm O2 in N2; 5% NH3 in N2; N2O; N2 or Ar, in order to investigate the effects of the annealing ambient on the formation of ultra-shallow junctions. RGA data was collected during some (if the anneals to assist in identifying the complex surface chemistry responsible for boron out-diffusion. Subsequent to the anneals, ellipsometric, XPS, four-point probe sheet resistance and SJJVIS measurements were performed to further elucidate the effects of the different ambients on the r etained boron dose, the sheet resistance value, the RTP grown oxide layer and the junction depth. In the cases where oxygen was present, e.g. N2O and O2 in N2, an oxidation enhanced diffusion of the boron was observed. This was most dramatic for the N2O anneals, which at 1050°C 10s diffused the boron an additional 283 to 427 Å, depending on the particular doping condition and species. For the case of BF2 implants and PLAD, anneals in 5% NH3 in N2 reduced the junction depth by a nitridation reduced diffusion mechanism. RGA data indicated that the out-diffusion mechanisms for B and BF2 implanted wafers are different, with the BF2 exhibiting dopant loss mechanisms during the 950°C anneals, producing F containing compounds. B implants did not show doping loss mechanisms, ais observed by the RGA, until the 1050°C anneals and these signals did not contain F containing compounds. Equivalent effective energy boron implants of 8.9 keV BF2 vs. 2.0 keV B, however, indicated that the overall effect of the F in the BF2 implants is very beneficial in the creation of ultra-shallow junctions (compared to B implants): reducing the junction depth by 428 Å, and increasing the electrical activation (determined by SRP) by 11.7%, even though the retained dose (resulting from an increased out-diffusion of B), was decreased by 5.4%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 299
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Daryanani, S. L., Downey, D. F., Cummings, J. J., Meloni, M. L., McKenna, C. and Nenyei, Z., European Semiconductor, April 1997.Google Scholar
2. Osburn, C.M., Downey, D.F., Felch, S.B., and Lee, B.S., Proc. of 11th Inti. Conf. on Ion Iplant. Tech., Austin Tx, IEEE in press.Google Scholar
3. Magee, C.W., Shallenberger, J.R., Denker, M., Downey, D.F., Meloni, M. and Cloherty, S., Proc. Fourth Internat. Workshop on the Measurement, Characterization and Modeling of Ultrashallow doping profiles in Semiconductors, RTP, NC (1997).Google Scholar
4. Downey, D.F., Osburn, C.M., Cummings, J.J., Daryanani, S. L., and Falk, S.W., to be published in Thin Solid films, 1997.Google Scholar
5. Mogi, T., Gossmann, H.-J., Eaglesham, D.J., Rafferty, C.S., Luftman, H.S., Unterwald, F.C., Boone, T., Poate, J.M., and Thompson, M.O., Proc. Fifth Inti. Symp onULSI, The Electrochem. Soc, 95–5, 1 (1995), 145.Google Scholar
6. Gossmann, H.-J., Mogi, T.K., Rafferty, C.S., Stoik, P.A., Eaglesham, D.J., Luftman, H.S., Unterwald, F.C., Boone, T., Thompson, M.O., and Poate, J.M., Proc. Fifth Inti. Symp on ULSI, The Electrochem. Soc, 95–5. (1995), 177.Google Scholar
7. Segawa, M., Yaba, T., Arai, M., Moriwaki, M., Umimoto, H., Sekiguchi, M., and Kanda, A., IEDM 96, p443, IEEE.Google Scholar
8. Tillmann, A., Mater. Res. Soc Symp., Proceedings, 387, 3 (1995)Google Scholar
9. Nenyei, Z., Tillmann, A., Gelpey, J., 2nd Int. Rapid Thermal Processing Conference, Fair, R. B., Lojek, B (eds.), Monterey, CA, Aug., (1994), p. 110.Google Scholar
10. Walk, H., Theiler, T, 2nd Int. Rapid Thermal Processing Conference, Fair, R. B., Lojek, B (eds.), Monterey, CA, Aug., (1994), p. 194.Google Scholar
11. Nenyei, Z., Walk, H., Knarr, T., J. Electrochem. Soc, Vol. 140 (1993), p. 1728.Google Scholar
12. Nenyei, Z., Gschwandtner, A., Marcus, S., 3rd Int. Rapid Thermal Processing Conference, Fair, R. B., Lojek, B (eds.), Amsterdam, The Netherlands, (1995), p. 58.Google Scholar
13. Tillmann, A., Knarr, T., 3rd Int. Rapid Thermal Processing Conference, Fair, R. B., Lojek, B (eds.), Amsterdam, The Netherlands, (1995), p. 214.Google Scholar
14. Felch, S.B., Lee, B.S., Downey, D. F., Zhao, Z. and Eddy, R.J., Proc of 11th Intl. Conf. on Ion Iplant. Tech., Austin Tx, IEEE in press.Google Scholar
15. Harrington, W.L., Magee, C.W., Pawlik, M., Downey, D.F., Osburn, C.M., and Felch, S.B., Proc Fourth Internat. Workshop on the Measurement, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, RTP, NC (1997).Google Scholar