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Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

Published online by Cambridge University Press:  15 February 2011

W. Pan ,
C.L. Thio ,
S.B. Desu  and
Cheewon Chung
W. Pan
Affiliation:
Thin Films Labs, Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24060–0237
C.L. Thio
Affiliation:
Thin Films Labs, Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24060–0237
S.B. Desu
Affiliation:
Thin Films Labs, Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24060–0237
Cheewon Chung
Affiliation:
FRAM, New Materials Laboratory, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea
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Abstract

Reactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 93
Copyright
Copyright © Materials Research Society 1995

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References

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