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Regrowth of Damaged Layers in Diamond Produced by Ion Implantation

  • G. S. Sandhu (a1), B. Liu (a1), N. R. Parikh (a1), J. D. Hunn (a1), M. L. Swanson (a1), Th. Wichert (a2), M. Deicher (a2), H. Skudlik (a2), W. N. Lennard (a3) and I. V. Mitchell (a3)...

We have used RBS/Channeling, perturbed angular correlation (PAC) and optical absorption to study the regrowth of disordered layers in diamond produced by implantation with carbon, or with carbon plus boron or indium ions. For C or C plus B implantation doses of 2 ×1015 cm−2 or less, complete recovery of channeling damage occurred after RTA at 1100°C or furnace annealing at 900°C. Optical measurements on samples implanted with high energy carbon ions show better recovery compared to the shallower implantations. PAC results showed that co-implantation with C and In caused a considerable fraction (∼15%) of the In-atoms to occupy well-defined lattice sites characterized by an electric field gradient having its major component along <111>, and a frequency of 116 MHz.

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2. Sandhu, G.S., Swanson, M.L. and Chu, W.K., Appl. Phys. Lett. 55, (1989) 1397.
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6. Liu, B., Sandhu, G.S., Swanson, M.L. and Chu, W.K., Nucl. Instr. Meth., 1989 (Accepted for publication).
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  • EISSN: 1946-4274
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