We found out the promising catalyst materials(NiPd). The NiPd not only has the low melting point but also has the Pd enhancing the surface diffusion at low temperatures(<500'c ). With the Pd film thickness increasing, we could control the CNT density and synthesize more aligned and uniform CNTs. We also obtained the better electrical properties including lower turn-on field (3.4 V/um) and higher current density (34.3 mA/cm2) for NiPd as catalyst. For the advantages described above, we believe that the difficulty of low temperature on FED can be overcome. Further, the large area field emission display might be fabricated in the future.
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