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Relaxation Phenomena in GaN/ AlN/ 6H-SiC Heterostructures

Published online by Cambridge University Press:  15 February 2011

N.V. Edwards ,
A.D. Batchelor ,
I.A. Buyanova ,
L.D. Madsen ,
M.D. Bremser ,
R.F. Davis ,
D.E. Aspnes  and
B. Monemar
N.V. Edwards
Affiliation:
Linköping universitet, Materiefysik, Linköping, Sverige, S-58183 ginger@ifm.liu.se
A.D. Batchelor
Affiliation:
Analytical Instrumentation Facility, Box 7531, N.C. State University, Raleigh, NC, USA, 27695
I.A. Buyanova
Affiliation:
Linköping universitet, Materiefysik, Linköping, Sverige, S-58183
L.D. Madsen
Affiliation:
Linköping universitet, Materiefysik, Linköping, Sverige, S-58183
M.D. Bremser
Affiliation:
North Carolina State University, Raleigh, NC, USA, 27695 Now at Aixtron Inc., 1569 Barclay Blvd., Buffalo Grove, IL, USA, 60089
R.F. Davis
Affiliation:
North Carolina State University, Raleigh, NC, USA, 27695
D.E. Aspnes
Affiliation:
North Carolina State University, Raleigh, NC, USA, 27695
B. Monemar
Affiliation:
Linköping universitet, Materiefysik, Linköping, Sverige, S-58183
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Abstract

We have developed a method to modulate the strain state (normally > 4 kbar, tensile) of moderately thick (∼2 μm) GaN based structures grown on 6H-SiC to a range 0 to -2 kbar of compressive stresses by introducing a strain-mediating layer (SML) above the standard high-temperature AlN buffer layer. The strain characteristics of subsequently deposited nitride layers can be modulated by changing the growth parameters of the SML layer. This is achieved by in-situ techiniques during crystal growth without degrading the optical and structural properties of the deposited layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.78
Copyright
Copyright © Materials Research Society 1999

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