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Reliability of Cu/WN thin Films Deposited on Low Dielectric Constant SiOF ILD

  • Seoghyeong Lee (a1), Dong Joon Kim (a1), Sung-Hoon Yang (a1), Jeongwon Park (a1), Seil Sohn (a1), Kyunghui Oh (a2), Yong-Tae Kim (a3) and Jong-Wan Park (a1)...


The effect of the post plasma treatment on the dielectric properties and reliability of fluorine doped silicon oxide (SiOF) films was studied. Also, the thermal stability of a Cu/WN interconnect system with SiOF intermetal dielectrics was examined by RTA. The surface roughness of SiOF films increased with the increasing plasma treatment power due to ion bombardment effect during the plasma treatment. As the plasma treatment power increased, the dielectric constant increased from 3.16 to 3.43, while the change in the relative dielectric constant of the plasma treated films by the boiling treatment was decreased in magnitude. Furthermore, the chemical properties of the plasma treated SiOF films near the top layer tend to resemble those of thermal oxides by the plasma treatment of sufficient power because of the reduction in the Si-F bonding in the films. In the case of Cu/WN/SiOF/Si multilayer structure, surface oxidation and densification due to the plasma treatment seemed to play an important role in protecting the interdiffusion between SiOF and metal interconnects.



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