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Rem and Tem Studies of Thin Film Growth Dynamics on si Surfaces

  • Hiroki Minoda (a1), Yasumasa Tanishiro (a1) and Katsumichi Yagi (a1)

A study of surfactant-mediated epitaxy of Ge on Si(111) surfaces was carried out by in-situ transmission electron microscopy (TEM) and reflection electron microscopy (REM). Formation of 3D islands on the Si(111)-In surfaces was suppressed because of a change of critical nucleation size of the 3D islands. It was also found that formation of misfit dislocations at the interface between Si and Ge films was promoted by predeposition of In.

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  • EISSN: 1946-4274
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