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Role of Dopants and Impurities on Pinhole Formation; Defects Formed At Ingan/Gan And AlGaN/GaN Quantum Wells

Published online by Cambridge University Press:  10 February 2011

Z. Liliental-Weber ,
S. Ruvimov ,
W. Swider ,
Y. Kim ,
J. Washburn ,
S. Nakamura ,
R. S. Kern ,
Y. Chen  and
J. W. Yang
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720; MS 62/203, USA
S. Ruvimov
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720; MS 62/203, USA
W. Swider
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720; MS 62/203, USA
Y. Kim
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720; MS 62/203, USA
J. Washburn
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720; MS 62/203, USA
S. Nakamura
Affiliation:
Nichia Chemical Industries Ltd, 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
R. S. Kern
Affiliation:
Hewlett Packard, San Jose and Palo Alto, CA 95131, USA
Y. Chen
Affiliation:
Hewlett Packard, San Jose and Palo Alto, CA 95131, USA
J. W. Yang
Affiliation:
APA Optics, Inc., 2950 N.E. 84th Lane, Blaine, MN 55449, USA
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Abstract

Transmission electron microscopy has been applied to study defects in epitaxial doped and undoped GaN layers grown by MOCVD on sapphire and SiC substrates. Samples with InGaN/GaN and AlGaN/InGaN heterostructures have also been investigated. The results of this study show that incorporation of “foreign” atoms increases formation of nano-tubes and pinholes. The highest density of these defects was formed close to the interface with sapphire where oxygen outdiffusion might be expected, or in the subsurface area in the samples where oxygen was added deliberately. Addition of In (or Al) at QW's also leads to pinhole formation. Increased In fraction or a larger number of QW's results in a greater density of pinholes and more surface roughness. Many of the “hollow” nanotube defects are terminated during growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 375
Copyright
Copyright © Materials Research Society 1998

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