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Room Temperature Ferromagnetism in Al-doped/Al2O3-doped ZnO Film

Published online by Cambridge University Press:  31 January 2011

Yuwei Ma ,
Jun Ding ,
Min Ran ,
Xue Lian Huang  and
Chee Mang Ng
Yuwei Ma
Affiliation:
g0700859@nus.edu.sg, National University of Singapore, Department of Materials Science and Engineering, Singapore, Singapore
Jun Ding
Affiliation:
msedingj@nus.edu.sg, National University of Singapore, Department of Materials Science and Engineering, Singapore, Singapore
Min Ran
Affiliation:
mserm@nus.edu.sg, National University of Singapore, Department of Materials Science and Engineering, Singapore, Singapore
Xue Lian Huang
Affiliation:
g0800280@nus.edu.sg, National University of Singapore, Department of Materials Science and Engineering, Singapore, Singapore
Chee Mang Ng
Affiliation:
ngcm@charteredsemi.com, Chartered Semiconductor Manufacturing Ltd, singapore, Singapore
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Abstract

In this manuscript, we study the magnetic property of Al-doped/Al2O3-doped ZnO films. We found that metallic Al-doped ZnO film shows room temperature ferromagnetism (RTFM). RTFM is correlated with the interaction of Al metallic clusters and ZnO matrix. The charge transfer has been observed between metallic Al and ZnO matrix. Therefore, RTFM in metallic Al doped ZnO may be highly probable due to charge transfer between metallic Al clusters and ZnO matrix. For Al2O3-doped ZnO film (denoted as (Zn1-x, Alx)O), RTFM was found in (Zn1-x, Alx)O film with a certain Al concentration range (16 mol%<x<50 mol%). The saturation magnetization is maximized in (Zn0.70, Al0.30)O film. The mechanism of RTFM can be explained as the interaction of ZnO nanocrystals (NCs) embedded in the amorphous phase and defects surrounding them.

Keywords

magnetic propertiesmagneticmetal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H08-11
Copyright
Copyright © Materials Research Society 2010

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