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“Scratching” Carbon Nanotubes onto Si Substrates<B>

Published online by Cambridge University Press:  01 February 2011

Jun Yu  and
Ying Chen
Jun Yu
Affiliation:
jun.yu@anu.edu.auThe Australian National UniversityDepartment of Electronic Materials Engineering, Research School of Physical Sciences and EngineeringCanberra ACT 0200Australia
Ying Chen
Affiliation:
ying.chen@anu.edu.au, The Australian National University, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Canberra, ACT, 0200, Australia
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Abstract

Large-scale, high-density, and patterned carbon nanotubes (CNTs) on both pure Si and quartz (SiO2) substrates have been produced using different approaches. The CNTs were synthesized by pyrolysis of the ball-milled iron phthalocyanine (FePc) in a tube furnace under a Ar-5% H2 gas flow. Because patterned CNTs are difficult to grow directly on smooth and perfect single-crystalline Si wafer surface, mechanical scratches were created to help the selective deposition and growth of CNTs on the scratched areas. This simple process does not require pre-deposition of any metal catalysts. For SiO2 substrates, which can be readily covered by a CNT film, patterned CNTs are produced using a TEM grid as mask to cover the areas where CNTs are not needed. The growth temperature and vapor density have strong influence on the patterned CNT formation. The scratch areas with a special structure and a higher surface energy help the selective nucleation of CNTs.

Keywords

chemical vapor deposition (CVD) (deposition)nanostructurereactive ball milling
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 922: Symposium U – Organic and Inorganic Nanotubes – From Molecular to Submicron Structures , 2006 , 0922-U07-15
Copyright
Copyright © Materials Research Society 2006

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References

1. Wei, B. Q., Vajtai, R., Jung, Y., Ward, J., Zhang, R., Ramanath, G., and Ajayan, P. M., Nature (London) 416, 495 (2002).Google Scholar
2. Jung, Y. J., Wei, B. Q., Vajtai, R., and Ajayan, P. M., Nano Lett. 3, 561 (2003).Google Scholar
3. Li, W. Z., Xie, S. S., Quian, L. X., Chang, B. H., Zou, B. S., Zhou, W. Y., Zhao, R. A., and Wang, G., Science 274, 1701 (1996).Google Scholar
4. Terrones, M., Grobert, N., Olivares, J., Zhang, J. P., Terrones, H., Kordatos, K., hsu, W., Hare, J., Townsend, P., Prassides, K., Cheeetham, A., Kroto, H. K., and Walton, D., Nature (London) 388, 52 (1997).Google Scholar
5. Ren, Z. F., Huang, Z. P., Xu, J. W., Wang, J. H., Bush, P., Siegal, M. P., and Provencio, P. N., Science 282, 1105 (1998).Google Scholar
6. Huang, S. M., Dai, L. M., and Mau, A. W. H., J. Phys, Chem. B 103, 4223 (1999)Google Scholar
7. Zhang, Z. J., Wei, B. Q., Ramanath, G., and Ajayan, P. M.. Appl. Phys. Lett. 77, 3764 (2000)Google Scholar
8. Zhang, X. F., Cao, A., Wei, B. Qo, Li, Y., Wei, J., Xu, C., and Wu, D., and Wu, D., Chem.. Phys. Lett. 362, 285 (2002)Google Scholar
9. Lee, C. J., Lyu, S. C., Kim, H., Park, C., and Yang, C., Chem. Phys. Lett. 359, 109 (2002).Google Scholar
10. Chen, Y. and Chadderton, L. T., J. Mater. Res. 19, 2791 (2004).Google Scholar
11. Chen, Y. and Yu, J., Appl. Phys. Lett. 87, 033103 (2005).Google Scholar
12. Chen, Y. and Yu, J., Carbon, 43, 3181 (2005).Google Scholar
13. Gogotsi, Y., Baek, C., and Kirscht, F., Semicond. Sci. Technol. 14, 928 (1999).Google Scholar