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Selected Area Epitaxial Regrowth of Amorphous Si/(100) Si Structures by Laser Annealing

  • A. Christou (a1), C. Varmazis (a1), T. Efthimiopoulos (a1) and C. Fotakis (a1)
Abstract
Abstract

Excimer laser KrF (248 nm) annealing at 93 mj/cm2 and 175 mJ/cm2 has been found to recrystallize amorphous silicon on (100)Si. The major impurities introduced by excimer laser annealing are carbon, while surface roughness remains as a major problem. Channel mobilities measured on MOSFETs processed on epitaxially regrown silicon were 98-115 cm2/v.s. Leakage currents between recrystallized silicon regions were 1-2 uA/cm2.

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  • EISSN: 1946-4274
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