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Selected Area Epitaxial Regrowth of Amorphous Si/(100) Si Structures by Laser Annealing

  • A. Christou (a1), C. Varmazis (a1), T. Efthimiopoulos (a1) and C. Fotakis (a1)

Excimer laser KrF (248 nm) annealing at 93 mj/cm2 and 175 mJ/cm2 has been found to recrystallize amorphous silicon on (100)Si. The major impurities introduced by excimer laser annealing are carbon, while surface roughness remains as a major problem. Channel mobilities measured on MOSFETs processed on epitaxially regrown silicon were 98-115 cm2/v.s. Leakage currents between recrystallized silicon regions were 1-2 uA/cm2.

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1.D'Heurle F.M., Proc. 1st International Symposium on VLSI Science and Technology, Detroit, 1982.
2.Hayaski T., Okamoto H. and Homma Y., Inst. of Phys. Conf. Ser. No. 57, 533 (1981).
3.Izumi K., Omura Y. and Sakai T., Electronic Materials Conf. Colorado, June 1982.
4.Badawi M. H., J. Phys. D. 10 19831 (1977).
5.Csepregi L., Kennedy E.F., Gallagher T.J. and Mayer J.W., J. Appl. Phys. 48, 4234 (1977).
6.Law H.W., Pinizzotto R. F., Yuan H.T. and Bellavance D.W., Electron. Lett. 17, 356 (1981).
7.Christou A., Richmond E.D., Wilkins B.R. and Knudson A.R., Appl. Phys. Lett. 44(8) 796 (1984).
8.Sze S.M., in Physics of Semiconductor Devices, Wiley Inc. New York (1981) pp. 431473.
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  • EISSN: 1946-4274
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