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Selective Si/SiGe Heterostructures for Advanced CMOS and BiCMOS Technologies

Published online by Cambridge University Press:  10 February 2011

J. L. Regolini
J. L. Regolini*
Affiliation:
FRANCE TELECOM CNET Grenoble BP 98, 38243, Meylan, FRANCE
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Abstract

New device architectures for advanced Integrated Circuits (IC) have been studied within the frame of our GRESSI Program through the technological development of the well known but less implemented low temperature selective epitaxial Si and SiGe films. High performance IC manufacturing requirements, such as large diameter wafer uniformity, reproducibility, throughput and reliability can be met by commercial integrated processing, single wafer cluster tools.

Using an industrially available CVD single wafer reactor, special care has been taken to integrate these films into advanced CMOS and BiCMOS processes with a minimum of drawbacks. Indeed, the Si and SiGe growth rate dependence on filling ratio as well as full selectivity are major issues. The loading effect as a function of temperature, gas mixture, Ge and dopant incorporation has been studied and optimized for these applications.

Finally, device results are compared between conventional and developed architectures showing real improvements with minimum process modifications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 99
Copyright
Copyright © Materials Research Society 1997

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References

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