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SiC Nanowires by Silicon Carburization

Published online by Cambridge University Press:  01 February 2011

Loucas Tsakalakos
Affiliation:
tsakalakos@research.ge.com, General Electric Global Research Center, Micro & Nano Structures Technologies, One Research Circle, KW-C1811, Niskayuna, NY, 12309, United States, 518-387-5715
Jody Fronheiser
Affiliation:
fronheis@research.ge.com, General Electric Global Research Center, Niskayuna, NY, 12309, United States
Larry Rowland
Affiliation:
rowland@research.ge.com, General Electric Global Research Center, Niskayuna, NY, 12309, United States
Mohamed Rahmane
Affiliation:
rahmane@research.ge.com, General Electric Global Research Center, Niskayuna, NY, 12309, United States
Michael Larsen
Affiliation:
larsen@research.ge.com, General Electric Global Research Center, Niskayuna, NY, 12309, United States
Yan Gao
Affiliation:
gao@research.ge.com, General Electric Global Research Center, Niskayuna, NY, 12309, United States
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Abstract

Polycrystalline SiC nanowires and composite Si nanowire-SiC nanograin structures have been synthesized using a combined catalytic chemical vapor deposition and carburization method. Si nanowires are grown at low temperature (550-650 C) and subsequently carburized at 1100-1200 C in a methane/hydrogen or propane/hydrogen environment. Thermochemical calculations showed that the Si carburization is thermodynamically favorable over a wide tempareture range, whereas our studies showed that the Si nanowire carburization is kinetically limited below ∼1100 °C. Partially carburized nanowires contained distinct SiC nanosized grains on the Si nanowire surface, whereas fully carburized nanowires were polycrystalline 3C SiC with grain sizes of ∼ 50-100 nm.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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