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SiGe Nanowires Grown by LPCVD using Ga-Au Catalysts

  • M. Monasterio (a1), A. Rodríguez (a1), T. Rodríguez (a1) and C. Ballesteros (a2)
Abstract

The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au.

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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