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Silicon Nanowire: a New Shape of Crystalline Silicon

Published online by Cambridge University Press:  10 February 2011

Y.F. Zhang ,
Y.H. Tang ,
N. Wang ,
C. S. Lee ,
D.P. Yu ,
I. Bello  and
S.T. Lee
Y.F. Zhang
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
Y.H. Tang
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
N. Wang
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
C. S. Lee
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
D.P. Yu
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
I. Bello
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
S.T. Lee
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
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Abstract

Silicon nanowires have been synthesized by using a high-temperature laser ablation method. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and lengths up to a few hundreds μm. Raman scattering spectrum shows an asymmetric peak at the same position as that of bulk crystalline silicon. The x-ray diffraction revealed an important contribution from surface oxide. This is due to the high surface-to-volume ratio. Visible photoluminescence (PL) was observed in nanowires with sub-5 nm diameter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 993
Copyright
Copyright © Materials Research Society 1998

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References

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