Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-25T10:47:37.488Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon nanowires solar cell

Published online by Cambridge University Press:  11 March 2011

Xiaobing Xie ,
Xiangbo Zeng ,
Wenjie Yao ,
Ping Yang ,
Shiyong Liu ,
Wenbo Peng ,
Chao Wang ,
Xingwang Zhang ,
Hongliang Zhu  and
Zhanguo Wang
Xiaobing Xie
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Xiangbo Zeng
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Wenjie Yao
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Ping Yang
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Shiyong Liu
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Wenbo Peng
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Chao Wang
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Xingwang Zhang
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Hongliang Zhu
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Zhanguo Wang
Affiliation:
Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, East Qinghua road 35A, Haidian District, Beijing 100083, China
Get access

Abstract

We made an amorphous-silicon (a-Si) solar cell with a nanowire-array structure on stainless steel(SS) by plasma enhanced chemical vapor (PECVD) deposition. This nanowire structure has an n-type Si nanowire array in which a-Si intrinsic layer and p type layer are sequentially grown on the surface of the nanowire. The highest open-circuit voltage (Voc) and short-circuit current density (Jsc) for AM 1.5 illumination were 620 mV and 13.4 mA/cm2, respectively at a maximum power conversion efficiency of 3.57%.

Keywords

Siphotovoltaicnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1305: Symposium AA – Group IV Semiconductor Nanostructures and Applications , 2011 , mrsf10-1305-aa17-07
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tian, B. Z., Zheng, X. L., Kempa, T. J., Fang, Y., Yu, N. F., Yu, G. H., Huang, J. L. and Lieber, C. M., nature 449(7164), 885–889 (2007).Google Scholar
2. Tsakalakos, L., Balch, J., Fronheiser, J., Korevaar, B. A., Sulima, O. and Rand, J., Appl Phys Lett 91(23), (2007).Google Scholar
3. Kelzenberg, M. D., Turner-Evans, D. B., Kayes, B. M., Filler, M. A., Putnam, M. C., Lewis, N. S. and Atwater, H. A., Nano Lett 8(2), 710–714 (2008).Google Scholar
4. Stelzner, T., Pietsch, M., Andra, G., Falk, F., Ose, E. and Christiansen, S., Nanotechnology 19(29), (2008).Google Scholar
5. Fan, Z. Y., Razavi, H., Do, J. W., Moriwaki, A., Ergen, O., Chueh, Y. L., Leu, P. W., Ho, J. C., Takahashi, T., Reichertz, L. A., Neale, S., Yu, K., Wu, M., Ager, J. W. and Javey, A., Nat Mater 8(8), 648–653 (2009).Google Scholar
6. Boettcher, S. W., Spurgeon, J. M., Putnam, M. C., Warren, E. L., Turner-Evans, D. B., Kelzenberg, M. D., Maiolo, J. R., Atwater, H. A. and Lewis, N. S., Science 327(5962), 185–187 (2010).Google Scholar
7. Baxter, J. B. and Aydil, E. S., Appl Phys Lett 86(5), (2005).Google Scholar
8. Law, M., Greene, L. E., Johnson, J. C., Saykally, R. and Yang, P. D., Nat Mater 4(6), 455–459 (2005).Google Scholar
9. Hu, L. and Chen, G., Nano Lett 7(11), 3249–3252 (2007).Google Scholar
10. Li, J. S., Yu, H. Y., Wong, S. M., Zhang, G., Sun, X. W., Lo, P. G. Q. and Kwong, D. L., Appl Phys Lett 95(3), (2009).Google Scholar
11. Tsakalakos, L., Balch, J., Fronheiser, J., Shih, M. Y., LeBoeuf, S. F., Pietrzykowski, M., Codella, P. J., Korevaar, B. A., Sulima, O., Rand, J., Davuluru, A. and Rapol, U., J Nanophotonics 1, (2007).Google Scholar
12. Kayes, B. M., Atwater, H. A. and Lewis, N. S., J Appl Phys 97(11), (2005).Google Scholar
13. Gunawan, O. and Guha, S., Sol Energ Mat Sol C 93(8), 1388–1393 (2009).Google Scholar
14. Jeon, M. and Kamisako, K., Appl Surf Sci 254(23), 7703–7707 (2008).Google Scholar
15. Wagner, R. S. and Ellis, W. C., Appl Phys Lett 4(5), 89–90 (1964).Google Scholar
16. Tang, M., Chang, S. T., Chen, T. C., Pei, Z. W., Wang, W. C. and Huang, J., Thin Solid Films 518, S259–S261 (2010).Google Scholar
17. Voz, C., Martin, I., Orpella, A., Puigdollers, J., Vetter, M., Alcubilla, R., Soler, D., Fonrodona, M., Bertomeu, J. and Andreu, J., Thin Solid Films 430(1-2), 270–273 (2003).Google Scholar