Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-19T13:09:34.055Z Has data issue: false hasContentIssue false
  • English
  • Français

A Simple Model for Stress Voiding in Passivated Thin Film Conductors

Published online by Cambridge University Press:  15 February 2011

J. R. Lloyd  and
E. Arzt
J. R. Lloyd
Affiliation:
also with Digital Equipment Corporation, 77 Reed Road, Hudson MA 01749-2895, USA
E. Arzt
Affiliation:
Max Planck Institut für MetaUforschung, Institut für Werkstoffwissenschaft, Seestraße 71, D-7000, Stuttgart 1, Germany
Get access

Abstract

A model is proposed for stress voiding in passivated thin film conductors. The rate limiting step is argued to be the formation of vacancies at dislocation jogs which then diffuse to void sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 45
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Klema, J., Pyle, R. and Domangue, E., Proc. 22nd Ann. Int'l. Reliab. Phys. Symp., IEEE, 1 (1984)Google Scholar
2) Curry, J., Fitzgibbon, G., Guan, Y., Muollo, R., Nelson, G. and Thomas, A., 22nd Int'l Reliab. Phys. Symp. IEEE, 6 (1984)Google Scholar
3) Yue, J.T., Funsten, W.P. and Taylor, R.V., Proc. 23rd Ann. Int'l. Reliab. Phys. Symp. IEEE 4 (1985)Google Scholar
4) Turner, T. and Wendel, K., Proc. 23rd Ann. Int'l Reliab.Phys. Symp. IEEE, 142 (1985)Google Scholar
5) Hinode, K., Owada, N., Nishida, T. and Mukai, K., J. Vac. Sci. Technol. B5, 518 (1987)Google Scholar
6) McPherson, J.W. and Dunn, C.F., J. Vac. Sci. Technol. B5, 1321 (1987)Google Scholar
7) Yost, F.G., Romig, A.D. Jr. and Bourcier, R.J., Sandia Report SAND88–0946, Sandia National Laboratories (1988) and F.G. Yost, D.E. Amos and A.D. Romig, Proc. 27th Ann. Int'l. Reliab. Phys. Smp. IEEE, 193 (1989)Google Scholar
8) Flinn, P.A. and Chiang, C., J. Appl. Phys, 67, 2927 (1990)Google Scholar
9) Arzt, E. and Nix, W. D, to be published in Met. Trans. (1992)Google Scholar
10 Kaneko, H., Hasanuma, M., Sawabe, A., Kawanoue, T., Kohanawa, Y., Komatsu, S. and Miyachi, M., Proc. 28th Ann. Int'l Reliab. Phys. Symp. IEEE, 194 (1990)Google Scholar
11) Tanikawa, A., Okabayashi, H., Morii, H. and Fujita, H., Proc. 28th Ann. Int'l. Reliab. Phys. Symp., 209 (1990)Google Scholar
12) Pramanik, D. and Jain, V., Proceedings SPIE Vol.1596, 132 (1991)Google Scholar