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Simulation of Capacitance-Voltage characteristics of Ultra-thin Metal-Oxide-Semiconductor Structures with Embedded Nanocrystals

Published online by Cambridge University Press:  01 February 2011

Mosur Rahman ,
Bo Lojek  and
Thottam Kalkur
Mosur Rahman
Affiliation:
mrahaman@ucces.edu, University Of Colorado at Colorado Springs, Colorado Springs, CO, 80933-7150, United States
Bo Lojek
Affiliation:
BLojek@uccs.edu, Atmel Corporation, Colorado Springs, CO, 80907, United States
Thottam Kalkur
Affiliation:
kalkur@eas.uccs.edu, University of Colorado at Colorado Springs, Electrical and Computer Engineering Dept., Colorado Springs, CO, 80933-7150, United States
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Abstract

This paper presents an approach to model quantum mechanical effects in solid-state devices such as Metal Oxide Semiconductor (MOS) capacitor with and without nanocrystal in the oxide at the device simulation level. This quantum-mechanical model is developed to understand finite inversion layer width and threshold voltage shift. It allows a consistent determination of the physical oxide thickness based on an agreement between the measured and modeled C-V curves. However, as for thinner oxides finite inversion layer width effects become more severe, quantum-mechanical model predicts higher threshold voltage than the classical model. The inversion-layer charge density and MOS capacitance in multidimensional MOS structures are simulated with various substrate doping profiles and gate bias voltages. The effectiveness of the QM correct method for modeling quantum effects in ultrathin oxide MOS structures is also investigated. The CV characteristic is used as a tool to compare results of the QM correction with that of the Schrödinger–Poisson (SP) solution and Classical solution The variation of (different parameters) for various doping profiles at different gate voltages is investigated.

Keywords

memorysimulationSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1071: Symposium F – Materials Science and Technology for Nonvolatile Memories , 2008 , 1071-F02-11
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

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