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Simulation Of Polycrystalline Silicon Growth By Pulsed Excimer Laser Annealing

  • Toshio Kudo (a1), Daiji Ichishima (a1) and Cheng-Guo Jin (a2)

The dynamic simulation of poly-Si film synthesis has been fulfilled by means of the overlapping irradiation of single- and double-pulsed XeCl excimer lasers shaped into the line beam. A novel model applied to the dynamic simulation is based on the homogeneous nucleation, and the growth and shrinkage velocity of Si grains. The results simulated with the single-pulsed XeCl excimer laser has reproduced the super lateral growth (SLG) phenomenon which occurs in the very narrow range of energy density (the near complete melt regime). The actual energy density dispersion within 5.3% allows us to visualize the multiformity of grain sizes in the cross sectional texture. Standing on the reproduction of the SLG phenomenon by the single-pulsed irradiation, we have obtained the practical knowledge of the growth process of larger grains by the double-pulsed irradiation. We intend that the first pulse has charge of completely melting and the second pulse has charge of adjusting the number of nuclei. The adjustment of the first pulse energy density rather than that of the second pulse energy density leads to the growth of huge columnar grains much larger than the thickness of the Si layer. For the double-pulsed irradiation, the influence of the worst energy density dispersion (each of double pulses has the same fluctuation as the single pulse) is much larger than that of the actual delay time jitter (within 2.5ns) in a sense of the multiformity of grain sizes.

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  • EISSN: 1946-4274
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