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Single Source Precursors for the Growth of Metal-Chalcogenide Thin Films

Published online by Cambridge University Press:  22 February 2011

Allen L. Seligson ,
Philip J. Bonasia ,
John Arnold ,
Kin-Man Yu ,
Jim M. Walker  and
Edith D. Bourret
Allen L. Seligson
Affiliation:
Department of Chemistry, University of California, Berkeley CA 94720 Materials Sciences Division, Lawrence Berkeley Laboratory. Berkeley CA 94720
Philip J. Bonasia
Affiliation:
Department of Chemistry, University of California, Berkeley CA 94720
John Arnold
Affiliation:
Department of Chemistry, University of California, Berkeley CA 94720 Materials Sciences Division, Lawrence Berkeley Laboratory. Berkeley CA 94720
Kin-Man Yu
Affiliation:
Department of Chemistry, University of California, Berkeley CA 94720
Jim M. Walker
Affiliation:
Department of Chemistry, University of California, Berkeley CA 94720
Edith D. Bourret*
Affiliation:
Department of Chemistry, University of California, Berkeley CA 94720
*
† To whom correspondence should be adressed
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Abstract

We have recently reported the growth of ZnTe and CdTe thin films from the novel volatile single-source precursors Zn(sitel)2 and Cd(sitel)2 [sitel = TeSi(TeSi(siMe3)3]. In an effort to understand the role played by the bulky substituents, we have prepared a number of related compounds and have investigated their potential for the growth of II-VI materials. We now describe the synthesis and characterization of M[EX(SiMe3)3]2 (M = Zn, Cd, Hg for E = Te, X = C; M = Zn for E = Se, X = C, Si) and their use as precursors molecules for the growth of ZnSe, ZnTe, CdTe and HgTe. The thin films were characterized by Rutherford Back scattering spectrometry (RBS) and X-ray diffraction. Pyrolysis reaction conditions for the alkyl and silyl chalcogenolates are also compared.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 665
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. O'Brien, P., Chemtronics 5, 61 (1991).Google Scholar
2. Bochmann, M., Webb, K., Harman, M. and Hursthouse, M.B., Angew. Chem.; Int. Ed. Engl. 29, 638 (1990).Google Scholar
3. Bochmann, M., Colman, A.P., Webb, K.J., Hursthouse, M.B. and Mazid, M., Angew. Chem.; Int. Ed. Engl. 30, 973 (1991).Google Scholar
4. Brennan, J.G., Siegrist, T., Carroll, P.J., Stuczynski, S.M., Reynders, P., Brus, L.E. and Steigerwald, M.L., Chem. Mater. 2, 403 (1990).Google Scholar
5. Steigerwald, M.L. and Sprinkle, C.R., J. Am. Chem. Soc. 109, 7200 (1987).Google Scholar
6. Bonasia, P.J. and Arnold, J., Inorg. Chem. 31, 2508 (1992).Google Scholar
7. Arnold, J., Walker, J.M., Yu, K.M., Bonasia, P.J., Seligson, A.L. and Bourret, E.D., J. Cryst. Growth 124, 647 (1992).Google Scholar
8. Bonasia, P.J., Gindelberger, D.E., Dabbousi, B.O. and Arnold, J., J. Am. Chem. Soc. 114, 5209 (1992);Google Scholar
Dabbousi, B.O., Bonasia, P.J. and Arnold, J., J. Am. Chem. Soc., 113, 3186 (1991);Google Scholar
Bonasia, P.J. and Arnold, J., (manuscript in preparation).Google Scholar