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Single-Crystal Thin Film Transistor by Grain-Filter Location-Controlled Excimer-Laser Crystallization

Published online by Cambridge University Press:  17 March 2011

Barry D. van Dijk ,
Paul Ch. Van der Wilt ,
G. J. Bertens ,
Lis.K. Nanver  and
Ryoichi Ishihara
Barry D. van Dijk
Affiliation:
Delft University of Technology, DIMES, Feldmannweg17, 2628 CT DELFT, The Netherlands, B.D.vandijk@dimes.tudelft.nl
Paul Ch. Van der Wilt
Affiliation:
Delft University of Technology, DIMES, Feldmannweg17, 2628 CT DELFT, The Netherlands
G. J. Bertens
Affiliation:
Delft University of Technology, DIMES, Feldmannweg17, 2628 CT DELFT, The Netherlands
Lis.K. Nanver
Affiliation:
Delft University of Technology, DIMES, Feldmannweg17, 2628 CT DELFT, The Netherlands
Ryoichi Ishihara
Affiliation:
Delft University of Technology, DIMES, Feldmannweg17, 2628 CT DELFT, The Netherlands
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Abstract

Thin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D12.3.1
Copyright
Copyright © Materials Research Society 2001

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