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Solid phase crystallization of hot-wire CVD amorphous silicon films

  • David L. Young (a1), Paul Stradins (a1), Eugene Iwaniczko (a1), Bobby To (a1), Bob Reedy (a1), Yanfa Yan (a1), Howard M. Branz (a1), John Lohr (a2), Manuel Alvarez (a3), John Booske (a3), Amy Marconnet (a3) and Qi Wang (a1)...

We measure times for complete solid phase crystallization (SPC) of hydrogenated amorphous silicon (a-Si:H) thin films that vary eight orders of magnitude, from a few ms to a few days. The time-to-crystallization activation energy is consistent with literature values of approximately 3.4 eV but the prefactor is markedly different for hot-wire chemical vapor deposition (HWCVD) films than for plasma-enhanced (PE) CVD films. The crystallized films were 0.3 – 2 μm thick, and deposited by high deposition rate (10-100 Å/s) HWCVD or standard PECVD onto glass substrates. We annealed these a-Si:H films over a wide temperature range (500 to 1100 °C) using techniques including simple hot-plates and tube furnaces, rapid thermal annealing by a tungsten-halogen lamp, and microwave electromagnetic heating at 2.45 GHz (magnetron) and 110 GHz (gyrotron).

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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