Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-19T22:14:15.428Z Has data issue: false hasContentIssue false
  • English
  • Français

Spray Chemical Vapor Deposition of CuInS2 Thin Films for Application in Solar Cell Devices

Published online by Cambridge University Press:  10 February 2011

Jennifer A. Hollingsworth ,
William E. Buhro ,
Aloysius F. Hepp ,
Philip P. Jenkins  and
Mark A. Stan
Jennifer A. Hollingsworth
Affiliation:
Dept. of Chemistry, Washington University, Box 1134, St. Louis, MO 63130
William E. Buhro
Affiliation:
Dept. of Chemistry, Washington University, Box 1134, St. Louis, MO 63130
Aloysius F. Hepp
Affiliation:
Photovoltaic Branch, NASA Lewis Research Center, MS 302–1, Cleveland, OH 44135
Philip P. Jenkins
Affiliation:
Photovoltaic Branch, NASA Lewis Research Center, MS 302–1, Cleveland, OH 44135
Mark A. Stan
Affiliation:
Photovoltaic Branch, NASA Lewis Research Center, MS 302–1, Cleveland, OH 44135
Get access

Abstract

Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300–400 °C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 °C. At even higher temperatures (500 °C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 171
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dzionk, C., Metzner, H., Hessler, S., and Mahnke, H.-E., Thin Solid films 299, 38 (1997).Google Scholar
2. Möller, Hans Joachim, Semiconductors for Solar Cells, (Artech House, Boston, 1993), pp. 35–36.Google Scholar
3. Shay, J.L. and Warnick, J., Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties and Applications, (Pergamon, Oxford, 1975), pp. 187–188.Google Scholar
4. Gysling, Henry J., Wernberg, Alex A., and Blanton, Thomas N., Chem. Mater. 4, 900 (1992).Google Scholar
5. Gao, Y.-M., Wu, P., Kershaw, R., Dwight, K., and Wold, A., Mater. Res. Bull. 25, 871 (1990).Google Scholar
6. Nomura, Ryoki, Fujii, Satoru, Kanaya, Kouichi, and Matsuda, Haruo, Polyhedron 9, 361 (1990).Google Scholar
7. Nomura, Ryoki, Seki, Yasuharu, Konishi, Kazuhisa, and Matsuda, Haruo, Applied Organometallic Chemistry 6, 685 (1992).Google Scholar
8. Nomura, Ryoki, Seki, Yasuharu, and Matsuda, Haruo, J. Mater. Chem. 2, 765 (1992).Google Scholar
9. Hirpo, Wakgari, Dhingra, Sandeep, Sutorik, Anthony C., and Kanatzidis, Mercouri G., J. Am. Chem. Soc. 115, 1597 (1993).Google Scholar
10. Perrin, D.D., Armarego, W.L.F., and Perrin, Dawn R., Purification of Laboratory Chemicals, 2nd ed. (Pergamon Press, Oxford, 1980).Google Scholar
11. Doolittle, L.R., Nucl. Instr. and Meth. B9, 344 (1985).Google Scholar
12. Rajaram, P., Thangraj, R., Sharma, A.K., Raza, A., and Agnihotri, O.P., Thin Solid films 100, 111 (1983).Google Scholar
13. Nomura, Ryoki, Kanaya, Kouichi, and Matsuda, Haruo, Chemistry Letters, 1849 (1988).Google Scholar