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STM Study of Initial Growth of Titanium Silicide on Si(III)

Published online by Cambridge University Press:  10 February 2011

H. Kuriyama ,
S. Ohara ,
K. Ezoe ,
T. Yamamoto ,
S. Tatsukawa ,
M. Umekawa  and
S. Matsumoto
H. Kuriyama
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
S. Ohara
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
K. Ezoe
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
T. Yamamoto
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
S. Tatsukawa
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
M. Umekawa
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
S. Matsumoto
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223, Japan
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Abstract

The nucleation and initial growth of titanium suicide on Si(111)7×7 surface has been studied using the scanning tunneling microscopy(STM) in ultrahigh vacuum. At room temperature Ti atoms react with Si atoms and preferentially adsorb on faulted half of the 7×7 surface. By annealing at 600°C, islandlike structures(amorphous titanium suicide) and striplike structures(crystalline titanium suicide) are formed. Annealing at 700°C drives the growth of striplike structures from islandlike structures. The striplike structures grow parallel to specific directions on the 7×7 surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 79
Copyright
Copyright © Materials Research Society 1997

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References

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