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Strained Ge Channel p-type MOSFETs Fabricated on Si1−xGex/Si Virtual Substrates

Published online by Cambridge University Press:  15 March 2011

Minjoo L. Lee ,
Christopher W. Leitz ,
Zhiyuan Cheng ,
Arthur J. Pitera ,
Gianni Taraschi ,
Dimitri A. Antoniadis  and
Eugene A. Fitzgerald
Minjoo L. Lee
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Christopher W. Leitz
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Zhiyuan Cheng
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Arthur J. Pitera
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Gianni Taraschi
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Dimitri A. Antoniadis
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
Eugene A. Fitzgerald
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We have fabricated strained Ge channel p-type metal oxide semiconductor field-effect transistors (p-MOSFETs) on Si1−xGex (x=0.7 to 0.9) virtual substrates. Capping the channel with a relaxed, epitaxial silicon layer eliminates the poor interface between silicon dioxide (SiO2) and pure Ge. The effects of the Si cap thickness, the strain in the Ge channel, and the thickness of the Ge channel on hole mobility enhancement were investigated. Optimized strained Ge p-MOSFETs show hole mobility enhancements of nearly 8 times that of co-processed bulk Si devices across a wide range of vertical field. These devices demonstrate that the high mobility holes in strained Ge can be utilized in a MOS device despite the need to cap the channel with a highly dislocated Si layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A1.9
Copyright
Copyright © Materials Research Society 2002

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