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Strained Si-based Nanomembrane Materials

Published online by Cambridge University Press:  01 February 2011

Shelley A. Scott ,
Michelle M. Roberts ,
Donald E. Savage  and
Max G. Lagally
Shelley A. Scott
Affiliation:
sscott@cae.wisc.edu, University of Wisconsin-Madison, Materials Science and Engineering, Engineering Research Building, 1500 Engineering Drive, Madison, WI, 53706, United States, 608-265-4119
Michelle M. Roberts
Affiliation:
mroberts@cae.wisc.edu, University of Wisconsin-Madison, Madison, WI, 53706, United States
Donald E. Savage
Affiliation:
dsavage@wisc.edu, University of Wisconsin-Madison, Madison, WI, 53706, United States
Max G. Lagally
Affiliation:
lagally@engr.wisc.edu, University of Wisconsin-Madison, Madison, WI, 53706, United States
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Abstract

Application of tensile strain to the Si(100) lattice is known to enhance carrier mobility in field effect transistors through modification of the Si band structure. Si is conventionally placed under tensile strain using methods such as Si3N4 capping for strained channel devices, and epitaxial growth of Si on a strain graded SiGe substrate for large area strain. The latter case preserves and propagates threading dislocations, and both cases require use of a bulk rigid substrate, which prohibits the use of strained Si in applications such as flexible electronics, or indeed in any application where strained Si is desirable on a non-epitaxial substrate. Elastically strained, single-crystal, Si-based nanomembranes, in which the release of a Si/SiGe/Si heterostructure from its growth substrate allows elastic strain sharing between the layers, circumvent these issues. These nanomembranes are extremely flexible, virtually dislocation-free, and transferable to almost any other surface.

Keywords

Six-ray diffraction (XRD)elastic properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L04-07
Copyright
Copyright © Materials Research Society 2007

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References

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