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Stress and Microstructure in Phosphorus Doped Polycrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

P. Krulevitch ,
G. C. Johnson  and
R. T. Howe
P. Krulevitch
Affiliation:
Berkeley Sensor & Actuator Center, Department of Mechanical Engineering
G. C. Johnson
Affiliation:
Berkeley Sensor & Actuator Center, Department of Mechanical Engineering
R. T. Howe
Affiliation:
Berkeley Sensor & Actuator Center, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
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Abstract

The research presented here is an investigation of the effects of phosphorus doping on residual stresses and microstructure in polycrystalline silicon. Undoped polycrystalline silicon films were deposited on phosphosilicate glass layers and annealed at 1050 °C for 5 to 60 minutes. The stress gradient through the film thickness was measured from wafer curvature, and microstructure was examined with cross-sectional TEM. A 20 minute anneal is sufficient for stress relief in initially tensile films and produces a uniform microstructure consisting of 0.1-0.2 µm equi-axed grains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 276: Symposia U/Y – Smart Materials Fabrication and Materials for Micro-Electro-Mechanical Systems , 1992 , 79
Copyright
Copyright © Materials Research Society 1992

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References

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