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The Stress Driven Rearrangement Instabilities in Electronic Materials and in Helium Crystals

Published online by Cambridge University Press:  01 February 2011

Michael Grinfeld ,
Pavel Grinfeld ,
Haruo Kojima ,
John Little ,
Ryuichi Masutomi ,
Per-Olof. Persson  and
Tsvetanka Zheleva
Michael Grinfeld
Affiliation:
US Army Research Laboratory, Aberdeen Proving Ground, MD 21005–5069, USA
Pavel Grinfeld
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Haruo Kojima
Affiliation:
Rutgers University, Serin Physics Laboratory, Piscataway, NJ 08854, USA
John Little
Affiliation:
US Army Research Laboratory, Adelphi, MD, USA
Ryuichi Masutomi
Affiliation:
Rutgers University, Serin Physics Laboratory, Piscataway, NJ 08854, USA
Per-Olof. Persson
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Tsvetanka Zheleva
Affiliation:
US Army Research Laboratory, Adelphi, MD, USA
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Abstract

At present, there is a consensus that various Stress Driven Rearrangement Instabilities (SDRI) are the implications of the mathematically rigorous theoretical Gibbs thermodynamics. Many applied researchers and practitioners believe that SDRI are also universal physical phenomena occurring over a large range of length scales and applied topics. There is a multitude of publications claiming experimental observation of the SDRI based phenomena. This opinion is challenged by other highly respected scholars claiming theoretical inconsistencies and multiple experimental counterexamples. Such an uncertainty is too costly for further progress on the SDRI topic. The ultimate goal of our project is to resolve this controversy.

The project includes experimental, theoretical, and numerical studies. Among various plausible manifestations of SDRI, the authors focused only on two most promising for which the validity of the SDRI has already been claimed by other researchers: a) stress driven corrugations of the solid-melt phase interface in macroscopic quantum 4He and b) the dislocation-free Stranski-Krastanov pattern of growth of semiconductor quantum dots. We devised a program and experimental set-ups for testing applicability of the SDRI mechanisms using the same physical systems as before but using implications of the SDRI theory for 2D patterning which have never been tested in the past.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 849: Symposium KK – Kinetics-Driven Nanopatterning on Surfaces , 2004 , KK4.5
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Gibbs, J.W., Trans. Connect. Acad. Sci., 3, pp. 108 – 248, 343 – 524 (1878).Google Scholar
2. Grinfeld, M.A., Dokl. AN SSSR,. 265(6), (1982).Google Scholar
3. Grinfeld, M.A., Soviet Physics Dokl., 290, 1358 (1986).Google Scholar
4. Grinfeld, M.A. Thermodynamic Methods in the Theory of Heterogeneous Systems. Sussex, Longman, 1991.Google Scholar
5. Nozieres, P., “Growth and Shape of Crystals”. (Lectures given at Beg-Rohu Summer School (Brittany, 1989), Solids Far From Equilibrium, ed. Godreche, C., (Cambridge University Press, 1991).Google Scholar
6. Caroli, B.,. Caroli, C., Roulet, B. and Voorhees, P.W., Acta Metall. 37, 257 (1989).Google Scholar
7. Srolovitz, D.J., Acta Metall. 37, 621 (1989).Google Scholar
8. Leo, P.H. and Sekerka, R.F., Acta Metall. 37, 3119, 3139 (1989).Google Scholar
9. Asaro, R.J. and Tiller, W.A., Metallurgical Transactions, 3, 1789 (1972).Google Scholar
10. Thiel, M., Willibald, A., Evers, P., Levchenko, A., Leiderer, P. and Balibar, S., Europhys. Lett. 20, 707 (1992).Google Scholar
11. Torii, R.H. and Balibar, S., J. Low Temp. Phys. 89, 391, (1992).Google Scholar
12. LeGoues, F.K., Copel, M. and Tromp, R.M., Phys. Rev., B, 42(18), 11690 (1990).Google Scholar
13. Eaglesham, D.J. and Cerullo, M., Phys. Rev. Lettr., 64(16), 1943 (1990).Google Scholar
14. Nozières, P., J. Phys. 3, 681 (1993).Google Scholar
15. Grinfeld, M.A., J. Nonlinear Sci., 3, 35 (1993).Google Scholar
16. Grinfeld, M.A., Phys. Rev. B, 49, 3 (1994).Google Scholar
17. Grinfeld, M.A., Scanning Microscopy, 8, 869 (1995).Google Scholar
18. Balibar, S. and Nozieres, P., Solid State Communications, 92 (1994).Google Scholar
19. Bimberg, D., Grundmann, M., and Ledentsov, N. N., Quantum Dot Heterostructures, Wiley, 1999.Google Scholar
20. Yao, T. and Woo, J.-C., Physics and Applications of Semiconductor Quantum Structures, Vector, 2001.Google Scholar
21. Kassner, K., and Misbah, C., Europhys. Lett., 28, 245–250, (1994);Google Scholar
Shenoy, V. B. and Freund, L. B., Mech., J. Phys. Solids, 50, 1817 (2002);Google Scholar
Kassner, K., Misbah, C., Muller, J, et al., Phys. Rev. E, 63, 036117 (2001);Google Scholar
Zhang, Y. W. and Bower, A. F., Mech., J. Phys. Solids 47, 2273 (1998); J. Appl. Phys., 95, 7813 (2004).Google Scholar
22. Bonnetier, E., Falk, R. and Grinfeld, M., Math. Model. Num. Anal., 33, 573–591 (1999).Google Scholar
23. Spencer, B. J. and Tersoff, J., Phys. Rev. Lett., 79, 4858 (1997).Google Scholar
24. Sethian, J.. Level Set Methods and Fast Marching Methods: Evolving Interfaces in Computational Geometry. Cambridge University Press, 1999.Google Scholar
25. Osher, S. and Fedkiw, R.. Level Set Methods and Dynamic Implicit Surfaces. Springer-Verlag, 2002.Google Scholar
26. Strang, G. and Fix, G.. An Analysis of the Finite Element Method. Wellesley-Cambridge Press, 1973.Google Scholar
27. Strang, G. and Persson, P.-O.. “Circuit simulation and moving mesh generation”. Proc. of Int. Symp. on Comm. and Inform. Tech. 2004 (ISCIT 2004), November 2005.Google Scholar