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    Vishwas, M. Narasimha Rao, K. Phani, A. R. Arjuna Gowda, K. V. and Chakradhar, R. P. S. 2011. Effect of annealing temperature on electrical and nano-structural properties of sol–gel derived ZnO thin films. Journal of Materials Science: Materials in Electronics, Vol. 22, Issue. 9, p. 1415.

    Tang, I-Tseng Wang, Y.C Hwang, W.C Hwang, C.C Wu, N.C Houng, Mau-Phon and Wang, Yeong-Her 2003. Investigation of piezoelectric ZnO film deposited on diamond like carbon coated onto Si substrate under different sputtering conditions. Journal of Crystal Growth, Vol. 252, Issue. 1-3, p. 190.

    Bukowski, T. J. McCarthy, K. McCarthy, F. Teowee, G. Alexander, T. P. Uhlmann, D. R. Dawley, J. T. and Zelinski, B. J. J. 1997. Piezoelectric properties of sol-gel derived ZnO thin films. Integrated Ferroelectrics, Vol. 17, Issue. 1-4, p. 339.

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    Kim, Hong Koo and Mathur, Michelle 1993. ZnO films deposited on GaAs substrates with a SiO2 thin buffer layer. Journal of Electronic Materials, Vol. 22, Issue. 3, p. 267.

    Kim, Hong Koo and Mathur, Michelle 1992. Thermally stable ZnO films deposited on GaAs substrates with a SiO2 thin buffer layer. Applied Physics Letters, Vol. 61, Issue. 21, p. 2524.


Structural and Electrical Properties of ZnO Films Deposited on GaAs Substrates by RF Magnetron Sputtering

  • Hong Koo Kim (a1) and Michelle Mathur (a1)
  • DOI:
  • Published online: 01 February 2011

Sputter deposition of ZnO films on GaAs substrates has been investigated. ZnO Alms were deposited using a ZnO compound target in Ar or Ar/O2 (95/5) ambient. Deposition parameters such as RF power, substrate-target distance, and gas composition/pressure were optimized to obtain highly c-axis oriented and highly resistive films. Deposited films were characterized by X-ray diffraction, scanning electron microscopy, capacitance, resistivity, and breakdown field strength measurements. X-ray diffraction measurements show a strong (0002)-plane peak with a full-width-half-maximum of less than 1°, indicating that the ZnO films deposited on GaAs substrates are highly c-axis oriented. DC resistivities of the films were measured to be on the order of 1011 Ω-cm.

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