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Structure and Bonding in Nitrided Oxide Films by Sims and Xps

Published online by Cambridge University Press:  10 February 2011

S. W. Novak ,
J. R. Shallenberger ,
D. A. Cole  and
J.W. Marino
S. W. Novak
Affiliation:
Evans East, 104 Windsor Center, Suite 101, East Windsor, NJ 08520snovak@evanseast.com
J. R. Shallenberger
Affiliation:
Evans East, 104 Windsor Center, Suite 101, East Windsor, NJ 08520
D. A. Cole
Affiliation:
Evans East, 104 Windsor Center, Suite 101, East Windsor, NJ 08520
J.W. Marino
Affiliation:
Evans East, 104 Windsor Center, Suite 101, East Windsor, NJ 08520
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Abstract

The N distribution and bonding in five types of oxynitride films have been investigated using SIMS and XPS. Films were grown using N2O, NO-O2 and NH3 gas sources, a remote plasma N source and a Helicon plasma source. The SIMS measurements show different N distributions for each type of sample. XPS measurements show only N≡Si3 bonding in the gas source films, N≡Si3 and O-N-Si2 bonding in the remote plasma sample, and N≡Si3, O-N≡Si2, and O2≡N-Si bonding in the Helicon plasma sample. Angle-resolved XPS measurements show that the O2≡N-Si bonding is deepest in the sample whereas the O-N≡Si2 bonding is associated with a surface oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 579
Copyright
Copyright © Materials Research Society 1999

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References

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