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Study of Pore Architecture in Silicon Oxide Thin Films by Variable-energy Positron Annihilation Spectroscopy

Published online by Cambridge University Press:  11 February 2011

Kenji Ito ,
Yoshinori Kobayashi ,
Runsheng Yu ,
Kouichi Hirata ,
Hisashi Togashi ,
Ryoichi Suzuki ,
Toshiyuki Ohdaira ,
M. Egami ,
H. Arao  and
C. Sakurai
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Kenji Ito
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305–8565, Japan
Yoshinori Kobayashi
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305–8565, Japan
Runsheng Yu
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305–8565, Japan
Kouichi Hirata
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305–8565, Japan
Hisashi Togashi
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305–8565, Japan
Ryoichi Suzuki
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305–8565, Japan
Toshiyuki Ohdaira
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305–8565, Japan
M. Egami
Affiliation:
Fine Chemicals Multi Media Research Center, Catalysts & Chemicals Industries Co., Ltd. (CCIC), Wakamatsu–ku, Fukuoka 808–0027, Japan
H. Arao
Affiliation:
Fine Chemicals Multi Media Research Center, Catalysts & Chemicals Industries Co., Ltd. (CCIC), Wakamatsu–ku, Fukuoka 808–0027, Japan
C. Sakurai
Affiliation:
Fine Chemicals Multi Media Research Center, Catalysts & Chemicals Industries Co., Ltd. (CCIC), Wakamatsu–ku, Fukuoka 808–0027, Japan
A. Nakashima
Affiliation:
Fine Chemicals Multi Media Research Center, Catalysts & Chemicals Industries Co., Ltd. (CCIC), Wakamatsu–ku, Fukuoka 808–0027, Japan
M. Komatsu
Affiliation:
Fine Chemicals Multi Media Research Center, Catalysts & Chemicals Industries Co., Ltd. (CCIC), Wakamatsu–ku, Fukuoka 808–0027, Japan
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Abstract

Application of porous silicon oxide thin films to nanotechnology is under intensive investigation. Introducing a large amount of nano pores into a silicon oxide matrix is important to develop low-k dielectrics for future ultra-large-scale integrated circuits (ULSI). In this work, we applied variable-energy positron annihilation to the characterization of porous silicon oxide thin films fabricated on silicon wafers by sputtering and spincoating. It was found that the sputtered film has higher open pore connectivity than that of the spincoated low-k film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 751: Symposium Z – Structure-Property Relationships of Oxide Surfaces and Interfaces II , 2002 , Z3.31
Copyright
Copyright © Materials Research Society 2003

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References

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