Skip to main content Accessibility help

Substrate Influence on the Reversible and Irreversible Polarization Contributions in Ferroelectric Thin Films

  • Dierk Bolten (a1), Ulrich Böttger (a1), Julio Rodriguez (a2), Oliver Lohse (a1), Michael Grossmann (a1), Theodor Schneller (a1) and Rainer Waser (a1) (a2)...


In this contribution, the influence of different substrates and textures on the reversible and irreversible polarization in Pb(Zr,Ti)O3 (PZT) thin films will be presented. One possible scenario to explain the origin of the ferroelectric hysteresis is the notion that the domain walls move through a potential generated by their interaction with randomly distributed defects of the matrix. This potential then gives rise to reversible and irreversible changes in the ferroelectric polarization. The exact features of the interaction potential also depend on the stress state of the material which can be influenced by a suitable choice of the substrate.

To study the substrate influence, PZT thin films have been deposited on commercial Si wafers, MgO and SrTiO3 single crystals. Electrical characterization methods (hysteresis and small signal capacitance measurements) have been used to extract information on reversible and irreversible polarization contributions.



Hide All
[1] Lines, M.E., Glass, A.M., Principles and Applications of Ferroelectrics and Related Materials, Clarendon Press, Oxford, 1977
[2] Araujo, C.A., Cuchiaro, J.D., McMillan, L.D., Scott, M.C. and Scott, J.F., Nature 374, 627 (1995)
[3] Scott, J.F. and Araujo, C.A., Science 246, 1400 (1989)
[4] Chikazumi, S., Charap, S.H., Physics of Magnetism (John Wiley & Sons, New York, 1964), p. 243
[5] Yang, T.J., Gopalan, V., Swart, P.J., Mohideen, U., Phys. Rev. Lett. 82, 4106 (1999)
[6] Nakamura, T., Nakamura, H., Jap. J. Appl. Phys. 1, 253 (1962)
[7] Bolten, D., Böttger, U., Schneller, T., Lohse, O., Grossmann, M. and Waser, R., App. Phys. Lett. 77, 3830 (2000)
[8] Boser, O. and Beshers, D.N., Mat. Res. Soc. Symp. Proc. 82, 441 (1987)
[9] Takayama, R. and Tomita, Y., J. Appl. Phys. 65, 1666 (1989)
[10] Lohse, O., Bolten, D., Grossmann, M., Waser, R., Hartner, W., and Schindler, G. in Ferroelectric Thin Films VI, edited by Treece, R. D., Jones, R. E., Foster, C. M., Desu, S. B., and Yoo, I. K.. (Mater. Res. Soc. Proc. 493, Warrendale, PA, 1998) pp. 267278
[11] Bolten, D., Lohse, O., Grossmann, M., Waser, R., Ferroelectrics 221, 251 (1999)
[12] Bolten, D., Böttger, U., Grossmann, M., Lohse, O. Kastner, M., Schindler, G. and Dehm, C. and Waser, R. in Ferroelectric Thin Films VIII, edited by Schwartz, R.W., Summerfelt, S.R., McIntyre, P.C., Miyasaka, Y., Wouters, D. (Mater. Res. Soc. Proc. 596, Warrendale, PA 1999)
[13] Spierings, G.A.C.M., Dormans, G.J.M., Moors, W.G.J., Ulenaers, M.J.E. and Larsen, P.K., J. Appl. Phys. 78, 1926 (1995)
[14] Ogawa, T., Senda, A. and Kasanami, T., Jap. J. Appl. Phys. 30, 2145 (1991)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed