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Surface and Interface Modification of Copper for Electronic Application

Published online by Cambridge University Press:  25 February 2011

W. A. Lanford ,
P. J. Ding ,
S. Hymes  and
S. P. Murarka
W. A. Lanford
Affiliation:
Department of Physics, University at Albany, Albany, NY 12222
P. J. Ding
Affiliation:
Department of Physics, University at Albany, Albany, NY 12222
S. Hymes
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Before copper will be used in the manufacture of microelectronic circuits, a number of its surface and interface properties have to be addressed. These include corrosion resistance, adhesion to dielectrics, and ability to block the transport of copper ions from the metal into adjacent materials. Different schemes have been explored to meet copper's material properties needed for electronic application. For surface modification, these include ion implantation, plasma treatments, formation of surface silicides, and annealing of copper films doped with other elements. For interface control, most schemes have involved deposition of an adhesion/barrier film. The present paper will discuss our present understanding of the mechanisms that govern surface and interface passivation. Special attention will be given to schemes that might lead to both surface and interface passivation in the same process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 169
Copyright
Copyright © Materials Research Society 1994

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References

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