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Surface Modification of Si Field Emitter Arrays for Vacuum Sealing

Published online by Cambridge University Press:  14 March 2011

M. Nagao ,
H. Tanabe ,
T. Kobayashi ,
T. Matsukawa ,
S. Kanemaru  and
J. Itoh
M. Nagao
Affiliation:
Dai Nippon Printing Co., Ltd, 250-1 Wakashiba, Kashiwa-shi, Chiba 277-0871, JAPAN
H. Tanabe
Affiliation:
Dai Nippon Printing Co., Ltd, 250-1 Wakashiba, Kashiwa-shi, Chiba 277-0871, JAPAN
T. Kobayashi
Affiliation:
Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158-8557, JAPAN
T. Matsukawa
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
S. Kanemaru
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
J. Itoh
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
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Abstract

Vacuum packaging is a very important issue for vacuum microelectronics devices, especially for field emission displays. Emission current from the field emitter array (FEA), however, is known to decrease significantly after the vacuum packaging process. The current decrease is caused by heating treatment in the vacuum sealing process. In the present paper, the effect of the heating treatment on Si FEA was investigated and CHF3 plasma treatment was proposed for avoiding the problem. The Si FEA was exposed to plasma for 15sec and emission characteristics were measured before and after the vacuum sealing process using frit. It was confirmed that CHF3 plasma treatment was very effective for avoiding the emission degradation of the Si FEA. Details of the heating damage and CHF3 plasma treatment are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 620: Symposium M – Morphology & Dynamics of Crystal Surfaces in Complex… , 2000 , Q1.3.1
Copyright
Copyright © Materials Research Society 2000

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References

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