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Surface State of InP (100) Substrates at Different Stages of A Cleaning

Published online by Cambridge University Press:  21 February 2011

A.A. Barriere ,
B.B. Kim ,
B. Mombelli ,
B. Porte  and
B. Desbat
A.A. Barriere
Affiliation:
LEMME, Université Bordeaux I, 351 cours de la Libération, 33405 Talence Cédex, France
B.B. Kim
Affiliation:
LEMME, Université Bordeaux I, 351 cours de la Libération, 33405 Talence Cédex, France
B. Mombelli
Affiliation:
LEMME, Université Bordeaux I, 351 cours de la Libération, 33405 Talence Cédex, France
B. Porte
Affiliation:
LEMME, Université Bordeaux I, 351 cours de la Libération, 33405 Talence Cédex, France
B. Desbat
Affiliation:
LSMC, Université Bordeaux I, 351 cours de la Libération, 33405 Talence Cédex, France
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Abstract

The chemical species present at the surface of InP substrates at the different stages of a classical cleaning (degreasing, etching, de-oxidation and UHV annealing) were studied by infrared absorption (IR). Traces of oxides were detected from nuclear reaction analysis (NRA). With these analysis techniques, after the complete treatment, no defects were revealed at the surface of the substrates. RHEED patterns showed that they were well-reconstructed and SrF2 thin films were succesfully epitaxially grown on the semiconductor. However, capacitancevoltage (C-V) measurements performed on MIS (SrF2/InP) structures showed that to obtain a large modulation of the surface potential of the semiconductor, a sulfurization of the substrates ((NH4)2Sx) was required after the etching phase. These results show that many complementary analysis techniques must be used to completely describe the surface state of a cleaned semiconductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 157
Copyright
Copyright © Materials Research Society 1993

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References

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