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Surfactant-Mediated Growth of MnSi1.7 on Si(001)

Published online by Cambridge University Press:  17 March 2011

S. Teichert ,
H. Hortenbach ,
D. K. Sarkar ,
G. Beddies  and
H.-J. Hinneberg
S. Teichert
Affiliation:
Institute of Physics, Chemnitz University of Technology D-09107 Chemnitz, Germany
H. Hortenbach
Affiliation:
Institute of Physics, Chemnitz University of Technology D-09107 Chemnitz, Germany
D. K. Sarkar
Affiliation:
Institute of Physics, Chemnitz University of Technology D-09107 Chemnitz, Germany
G. Beddies
Affiliation:
Institute of Physics, Chemnitz University of Technology D-09107 Chemnitz, Germany
H.-J. Hinneberg
Affiliation:
Institute of Physics, Chemnitz University of Technology D-09107 Chemnitz, Germany
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Abstract

The formation of the silicide MnSi1.7 by reactive deposition of Mn onto Si(001) has been studied using Sb as a surfactant. The growth was performed under UHV conditions by simultaneous or consecutive exposure of the Si substrates, held at high temperatures (550°C, 600 °C), to a flux of Sb and Mn atoms. The presence of Sb during the growth strongly increases the island density and changes the crystalline orientation of the MnSi1.7 grains. The morphology and the orientation of the resulting silicide are the same both for the deposition of Mn on a Sb terminated Si(001) surface and for the co-deposition of Mn and Sb on Si(001). A residual Sb coverage close to one monolayer (ML) at the sample surface has been determined for both of the preparation modes at Tsub = 550 °C. The transition from the growth mode without Sb to the surfactant-controlled growth has been studied for Tsub = 600 °C. It has been found that the silicide morphology and orientation strongly depend on the thickness of Sb pre-coverage, which was increased from 0 to about 0.7 ML (1 ML = 6.78·1014 atoms cm-2).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P11.34
Copyright
Copyright © Materials Research Society 2001

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