A low-permittivity (low-k) polymeric material has been synthesized using methyltriethoxysilane as base material. The films were reproduceably deposited, by spin-coating on Si wafers with a uniform thickness in the range of 0.3-0.5μm depending on speed. The parameters for spin coating (spin speed and spin time etc.,) have been optimized. The effects of various curing conditions on the structural and dielectric properties have been studied. Fourier Transform Infrared Spectroscopy (FTIR) shows prominent peaks of Si-CH3 stretch and Si-O stretch modes. Test structures on silicon were fabricated to measure the dielectric constant (k) of the material. The values of k were found to be in the range of 2.6-1.2 for annealing temperatures 150°C-450°C. The dielectric constant decreases as the curing temperature increases.
Email your librarian or administrator to recommend adding this journal to your organisation's collection.