Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-16T20:42:52.101Z Has data issue: false hasContentIssue false

Tc-δ Relations in YB2Cu3O7-δ Thin Films: Effects of Oxygen Pressure During Growth

Published online by Cambridge University Press:  26 February 2011

R. Feenstra
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831–6057
D. P. Norton
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831–6057
J. D. Budai
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831–6057
D. K. Christen
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831–6057
D. H. Lowndes
Affiliation:
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831–6057
V. C. Matijasevic
Affiliation:
Department of Applied Physics, Stanford University, Stanford, CA 94305
C. B. Eom
Affiliation:
Department of Applied Physics, Stanford University, Stanford, CA 94305
T. H. Geballe
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974–0634
E. S. Hellman
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974–0634
E. H. Hartford
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974–0634
Get access

Abstract

The Tc dependence on oxygen content was measured for YBa2Cu3O7-δ films grown with a variety of techniques (solid phase epitaxy, laser ablation, off-axis sputtering, co-evaporation) at oxygen pressures p(O2) ranging from 1.0 atm to 0.1 mTorr. Dissimilar dependences resulted for each film type, with Tc either increasing or decreasing for small increments in δ from maximum oxygen occupancy. Varying systematically with p(O2) during growth, the deviations are attributed to competing effects from hole-doping lattice defects (most likely on the Y-site) on the carrier density of the CuO2 planes and basal plane oxygen capacity, respectively, giving rise to overdoping or underdoping after low temperature oxidation in 1.0 atm of oxygen.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hammond, R. H. and Bormann, R., Physica C 162–164, 703 (1989)Google Scholar
2. Feenstra, R. et al., J. Appl. Phys. 69, 6569 (1991)Google Scholar
3. Feenstra, R. et al., Phys. Rev. B Rapid Comm. 45, 7555 (1992)Google Scholar
4. Hellman, E. S. et al., J. Mater. Res. 7, 795 (1992)Google Scholar
5. Cava, R. J. et al., Physica C 165, 419 (1990)Google Scholar
6. Jorgensen, J. D. et al., Phys. Rev. B 41, 1863 (1990)Google Scholar
7. Tokura, Y. et al., Phys. Rev. B 38, 7156 (1989)Google Scholar
8. Lowndes, D. H. et al., Mater. Res. Soc. Proc. 169 (Pittsburgh, PA 1990), pp. 431 Google Scholar
9. Eom, C. B. et al., Physica C 171, 354 (1990)Google Scholar
10. Matijasevic, V. C. et al., J. Mater. Res. 6, 682 (1991)Google Scholar
11. Jones, E. C., Christen, D. K., Feenstra, R., et al., to be publishedGoogle Scholar
12. Manthiram, A. et al., J. Solid State Chem. 73, 278 (1988);Google Scholar
McCarron, E. M. III et al., J. Solid State Chem. 78, 192 (1989).Google Scholar
13. Feenstra, R., Norton, D. P. et al., to be publishedGoogle Scholar
14. Lindemer, T. B. et al., Physica C 178, 93 (1991)Google Scholar