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Tem Assessment of Defects in (CdHg)Te Heterostructures

Published online by Cambridge University Press:  25 February 2011

S.G. Lawson-Jack ,
I.P. Jones ,
D.J. Williams  and
M.G. Astles
S.G. Lawson-Jack
Affiliation:
School of Metallurgy and Materials, University of Birmingham, Birmingham, United Kingdom
I.P. Jones
Affiliation:
School of Metallurgy and Materials, University of Birmingham, Birmingham, United Kingdom
D.J. Williams
Affiliation:
Royal Signals and Radar Establishments, Great Malvern, Worcs, United Kingdom
M.G. Astles
Affiliation:
Royal Signals and Radar Establishments, Great Malvern, Worcs, United Kingdom
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Abstract

Transmission electron microscopy has been used to assess the defect contents of the various layers and interfaces in (CdHg) Te heterostructures. Examination of cross sectional specimens of these materials suggests that the density of misfit dislocations at the interfaces is related to the layer thicknesses, and that the high density of dislocations which are generated at the GaAs/CdTe interface are effectively prevented from penetrating into the CdHgTe epilayer by a 3um thick buffer layer. The majority of the dislocations in the layers were found to have a Burgers vector b = a/2<110> and either lie approximately parallel or inclined at an angle of ∼ 60° to the interfacial plane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 65
Copyright
Copyright © Materials Research Society 1991

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References

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