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Temperature Dependent Emissivity of Multilayers on Silicon

Published online by Cambridge University Press:  10 February 2011

S. Abedrabbo ,
N. M. Ravindra ,
W. Chen ,
V. Rajasekhar ,
T. Golota ,
O. H. Gokce ,
A. T. Fiory ,
B. Nguyenphu ,
A. Nanda  and
T. Speranza
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S. Abedrabbo
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
N. M. Ravindra
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
W. Chen
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
V. Rajasekhar
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
T. Golota
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
O. H. Gokce
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
A. T. Fiory
Affiliation:
Lucent Technologies, Murray Hill, NJ 07974
B. Nguyenphu
Affiliation:
Lucent Technologies, Orlando, FL 32819
A. Nanda
Affiliation:
SEMATECH, Austin, TX 78741
T. Speranza
Affiliation:
SEMATECH, Austin, TX 78741
W. Maszara
Affiliation:
SEMATECH, Austin, TX 78741
G. Williamson
Affiliation:
SEMATECH, Austin, TX 78741
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Abstract

The spectral transmittance, reflectance and emittance of silicon related materials and structures are measured simultaneously utilizing a spectral emissometer operating at near- and mid-IR spectral range and temperature range of 300 to 1500K. Several kinds of samples have been considered here: a) SiO2/Si with oxide in the thickness range of 653–5124A, b) SiO2/Si/ SiO2 with oxide thickness of 5000A on both front and back sides c)Multi-layers of SiO2/Si/ SiO2/poly-Si, with backside oxide of 1600A and 250A, respectively and d) separation by implantation of oxygen (SIMOX), with embedded oxide thickness of 4000A. An extensive analysis has been performed to interpret and compare the results obtained from these measurements.

Concerning the SiO2/Si, we find that the experimental results are in accord with the sinusoidal relation of emissivity as a function of the silicon oxide thickness and hence the Applied Materials model. Experimental results on SiO2/Si/SiO2 are also presented here. For the multi-layers of SiO2/Si/SiO2/poly-Si, it is interesting to note that for temperatures above 600°C, the emissivity is independent of temperature and wavelength for the backside oxide thickness of 1600 and 250A. SIMOX measurements are presented as well. The Fiory model has been utilized extensively to investigate the high temperature emissivity data. The applications and limitations of this model are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 69
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Fiory, A., Lucent Technologies, personal communication March (1997).Google Scholar
2. Ravindra, N.M., Tong, F.M., Schmidt, W., Chen, W. and Abedrabbo, S., Nanda, A.K., Speranza, T. and Tello, A.M. in ISSM'96 Proceedings of the Fifth International Symposium on Semiconductor Manufacturing. Oct. (1996), Tokyo, Japan, p. 101–105.Google Scholar
3. Ravindra, N.M., Abedrabbo, S., Chen, W., Tong, F.M., Nanda, A.K. and Sperenza, T., IEEE Transactions on Semiconductor Manufacturing, Nov. (1997) (in press).Google Scholar
4. Ravindra, N.M., Tong, F.M., Abedrabbo, S., Chen, W. and Schmidt, W., P-TAB Presentation Sept. (1996)Google Scholar
5. Peuse, B. and Yam, M., Applied Materials, personal communication March (1997).Google Scholar
6. Timans, P.J. in Rapid Thermal and Integrated Processino V. edited by Gelpy, J.C, Ozturk, M.C., Thakur, R.P.S., Fiory, A.T., and Roozeboom, F. (Mater. Res. Soc. Proc. 429, Pittsburgh, PA 1996), p. 3–14.Google Scholar
7. Bom, M. and Wolf, E., Principles of Optics. Pergamon Press, Oxford, 1970, pp. 55–61.Google Scholar
8. Sorrell, F.Y.. and Gyurcsik, R.S., IEEE Transactions on Semiconductor Manufacturing. V6 (No.3), p. 273–276. Aug. (1993).Google Scholar
9. Timans, P.J. in RTP'96. edited by Fair, R.B., Green, M.L., Lojek, B., and Thakur, R.P.S. (RTP'96, Round Rock, TX 1996), p. 145–156.Google Scholar