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A Test of Two Solute-Trapping Models*

  • M. J. Aziz (a1), J. Y. Tsao (a2), M. O. Thompson (a3), P. S. Peercy (a2), C. W. White (a1) and W. H. Christie (a3)...

Two solute trapping models are compared. They are shown to predict identical behavior at any given end of a phase diagram but different behavior as the phase diagram is traversed. The segregation behavior of dilute solutions of Ge in Si (ke < 1) and of Si in Ge (ke > 1) during regrowth from pulsed-laser melting is being studied using transient conductance, high resolution RBS, and SIMS. Our results to date suggest a significant amount" of solute trapping (k —> 1) of Ge in Si and of Si in Ge. Such a result would be inconsistent with the predictions of one of the models.

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Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-AC05-840R21400 with Martin Marietta Energy Systems, Inc.

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  • EISSN: 1946-4274
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