Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-16T06:12:45.222Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Annealing and Cooling-Rate Dependent Electronic Properties of Bulk GaAs Crystals

Published online by Cambridge University Press:  26 February 2011

J. M. Parsey Jr ,
M. T. Asom ,
L. C. Kimerling ,
R. Sauer  and
F. A. Thiel.
J. M. Parsey Jr
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. T. Asom
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. C. Kimerling
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. Sauer
Affiliation:
Universitat Stuttgart, Pfaffenwaldring 57/VI, 7000 Stuttgart 80, W. Germany, work performed while a resident visitor at AT&T Bell Labs.
F. A. Thiel.
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Get access

Abstract

Changes in the electronic properties of bulk GaAs crystals, grown from melts of varied As:Ga ratios, and Si-donor concentrations, were investigated by annealing in the temperature range 850°C to 1050°C. We found a gradual reduction of the free carrier concentration, a corresponding decrease in the luminescence spectral intensity, and a suppression of the near band-edge peaks with annealing time at any temperature. Deep level and impurity concentrations remained essentially constant. The magnitude of these changes was found to be determined predominantly by the annealing time and temperature, and the starting composition of the material We argue for a non-radiative native acceptor defect, or defect complex, forming during the annealing cycle. We present here the thermodynamic interpretation for this behavioi in terms of point defect equilibria.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 429
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

+

Present address: AT&T Bell Laboratories, Reading, PA 19601

References

REFERENCES

1.Lagowski, J., Gatos, H.C., Kang, C.H., Skowronski, M., Ko, K.Y. and Lin, D.G., Appl Phys. Lett. 49. 892 (1987).Google Scholar
2.Look, D.C., Yu, P.W., Theis, W.M., Ford, W., Mathur, G., Lee, D.H. and Li, S.S., Appl Phys. Lett. 40 1083 (1986).Google Scholar
3.Woodall, J.M. and Woods, J.F., Solid State Commun., 4, 33 (1966).Google Scholar
4.Vaughan, J., private communication.Google Scholar
5.Rumsby, D., Grant, I., Brozel, M.R., Foulkes, E.J., and Ware, R.M. in Semi-Insulating III-V Materials, Ka-Nee-Ta 1984, edited by Look, D.C. and Blakemore, J.S. (Shiva, UK, 1984) pp. 165–170.Google Scholar
6.Holmes, D.E., Kuwamoto, H., Kirkpatrick, C.G. and Chen, R.T. in Semi-Insulating III-V Materials. Ka-Nee-Ta 1984, edited by Look, D.C. and Blakemore, J.S. (Shiva, UK, 1984) pp. 204–213.Google Scholar
7.Harris, J., Nannichi, Y., Pearson, G.L. and Day, G.F., J. Appl Phys. 40., 4575 (1969).Google Scholar
8.Klein, P.B., Nordquist, P.E.R. and Siebenmann, D.G., J. Appl Phys. 51, 4861 (1980). J. Edmond, J. Appl. Phys. 31 1428 (1960).Google Scholar
9.Makram-Ebeid, S., Gaustard, D., Devillard, P. and Martin, G. M., Appl Phys. Lett. 40., 161 (1982).Google Scholar
10.Asom, M.T., Parsey, J.M. Jr, Kimerling, L.C., Sauer, R. and Thiel, F.A., presented at the Electronic Materials Conference, Santa Barbara, CA, 1987, to be published in J. Electronic Matls.Google Scholar
11.Parsey, J.M., Jr. and Thiel, F.A, J. Crystal Growth 73. 211 (1985).Google Scholar
12.Panish, M.B., J. Crystal Growth 27 6 (1974). J.M. Parsey, Jr., unpublished.Google Scholar
13.Parsey, J.M. Jr, Lagowski, J. and Gatos, H.C. in Proceedings of the Symposium on III-V Opto-electronics Epitaxy and Device Related Processes, edited by Mahajan, S. and Keramidas, V., (Electrochem. Soc. Proc. 83–13, Pennington, NJ 1983) pp. 61–68.Google Scholar
14.Logan, R.M. and Hurle, D.T.J., J. Phys. Chem. Solids 32 1739 (1971). D.T.J. Hurle, J. Phys. Chem. Solids 40. 613 (1979).Google Scholar
15.Panish, M.B. in The Use of Phase Diagrams in Electronic Materials and Glass Technology edited by Alper, A.N. (Academic Press, NY, 1970), Chapter IIGoogle Scholar
16.Woodall, J. (private communication).Google Scholar
17. see, for example, Neumark, G.F. and Kosai, K. in Deep Levels, GaAs Alloys, Photochemistry, Vol.19, Semiconductors and Semimetals, edited by Willardson, R.K. and Beer, A.C., (Academic Press, NY, 1983) pp. 1–75.Google Scholar