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Thermally Activated Flux Flow in thin Films of y2ba4cu8016‐δ

Published online by Cambridge University Press:  28 February 2011

P. Berghuis ,
P.H. Kes ,
B. Dam ,
G.M. Stollman  and
J. Van Bentum
P. Berghuis
Affiliation:
Kamerlingh Onnes Laboratory, Leiden University, P.O. Box 9506, 2300 RA Leiden, The Netherlands
P.H. Kes
Affiliation:
Kamerlingh Onnes Laboratory, Leiden University, P.O. Box 9506, 2300 RA Leiden, The Netherlands
B. Dam
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven
G.M. Stollman
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven
J. Van Bentum
Affiliation:
Nijmegen University, Toernooiveld, 6525 ED Nijmegen.
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Abstract

The resistive transition of a preferentially oriented thin film of Y2Ba4Cu8O16‐δ has been measured in fields up to 20 T oriented parallel to the c‐axis. The data can be analysed in terms of thermally activated flux flow and flux pinning due to dislocation lines. The analysis yields the upper critical field Bc2 which shows an unusual upward curvature at low temperatures. Furthermore an estimate can be made of the correlation length Lc of the flux line lattice in the field direction. Lc is found to be very small, however, remaining larger than the Cu02 plane distance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 879
Copyright
Copyright © Materials Research Society 1990

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References

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