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Thermodynamics of Deep Levels in Semiconductor

Published online by Cambridge University Press:  28 February 2011

J.A. van Vechten
J.A. van Vechten*
Affiliation:
IBM Thomas J. Watson Research Center, P. O. Box 218 Yorktown Heights, New York 10598
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Abstract

Thermodynamnies is obviously central to the ultimate goal ol an exquisite control of the electronic properties of scmiconducting devices and to the uinderstanding this will require. It should also be useful for the subsidiary goal of the firm identification of the various electrically active defects. This subsidiary goal will not be achieved unless adequate attention is paid to the reactions among the various atomic and ionization states of the defects, the electrons and the holes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 83
Copyright
Copyright © Materials Research Society 1985

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